cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 1/9 MEP4435Q8 cystek product specification p-channel enhancement mode power mosfet MEP4435Q8 bv dss -30v i d -13a r dson(max) @v gs =-10v, i d =-10a 9.3m (typ.) r dson(max) @v gs =-5v, i d =-7a 14m (typ.) r dson(max) @v gs =-4.5v, i d =-5a 15m (typ.) description the MEP4435Q8 is a p-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating package equivalent circuit outline MEP4435Q8 s source d drain g gate sop-8
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 2/9 MEP4435Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current @ t a =25 c, v gs =-10v -13 a continuous drain current @ t a =100 c, v gs =-10v i d -8.2 a pulsed drain current i dm -50 *1 a avalanche current i as -13 a avalanche energy @ l=0.1mh, i d =-13a, r g =25 e as 8.5 mj repetitive avalanche energy @ l=0.05mh e ar 2.5 *2 mj t a =25 w 2.5 *3 w total power dissipation t a =100w p d 1 *3 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 20 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board, t 10s ; 125 c/w when mounted on minimum copper pad. electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0, i d =-250 a v gs(th) -1 -1.5 -3 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =25v, v ds =0 i dss - - -1 a v ds =-24v, v gs =0 i dss - - -10 a v ds =-24v, v gs =0, tj=125 c - 9.3 12 v gs =-10v, i d =-13a - 14 20 v gs =-5v, i d =-7a r ds(on) *1 15 21 m v gs =-4.5v, i d =-5a g fs *1 - 20 - s v ds =-5v, i d =-10a dynamic ciss - 2994 - coss - 323 - crss - 258 - pf v ds =-15v, v gs =0, f=1mhz
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 3/9 MEP4435Q8 cystek product specification electrical characteristics(cont.) (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions t d(on) *1, 2 - 14 - tr *1, 2 - 10 - t d(off) *1, 2 - 44 - t f *1, 2 - 15 - ns v dd =-15v, i d =-1a, v gs =-10v, r g =2.7 qg (v gs =10v) *1, 2 - 35 - qg (v gs =4.5v) *1, 2 - 18 - qgs *1, 2 - 12 - qgd *1, 2 - 13 - nc v ds =-15v, i d =-10a, v gs =-10v, rg - 4 - v gs =15mv, v ds =0, f=1mhz source-drain diode i s *1 - - -3 i sm *3 - - -12 a v sd *1 - - -1.2 v i f =i s , v gs =0v trr - 40 - ns qrr - 28 - nc i f =i s , di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping MEP4435Q8-0-t3-g sop-8 (pb-free lead plating & halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 4/9 MEP4435Q8 cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 01234 5 -10v -v ds , drain-source voltage(v) -i d , drain current (a) , -9v , -8v , -7v , -6v , -5 v v gs =-4v v gs =-3v brekdown voltage vs ambient temperature 25 30 35 40 -60 -20 20 60 100 140 180 tj, junction temperature(c) -bv dss , drain-source breakdown voltage(v) i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-2.5v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i s , source drain current(a) -v sd , source-drain voltage(v) 0 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0 4 8 12 16 20 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , static drain-source on-state resistance(m) v gs =-10v, i d =-10a -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-10a
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 5/9 MEP4435Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 tj, junction temperature(c) -v gs( th) , threshold voltage(v) i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-5v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 8 16 24 32 40 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-10a vds=-5v vds=-10v vds=-15v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 1ms 100 s 10 s t a =25c, tj=150c, v gs =-10v ja =50c/w, single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 6/9 MEP4435Q8 cystek product specification typical characteristics(cont.) single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w recommended soldering footprint
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 7/9 MEP4435Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 8/9 MEP4435Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
ech electronics corp. spec. no. : c391q8-a issued date : 2008.07.17 revised date : 2014.03.05 page no. : 9/9 cyst MEP4435Q8 cystek product specification sop-8 dimension marking: device name year code : last digit of christian y ea r month code : a, b, c, d, e, f, g, h, j, k, l, and m represent jan thru dec production lot serial number: rolling from 01 each month 8-lead sop-8 plastic package cystek packa g e code: q8 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1850 0.2007 4.70 5.10 g 0.0531 0.0689 1.35 1.75 b 0.1496 0.1575 3.80 4.00 h 0.1889 0.2007 4.80 5.10 c 0.2283 0.2441 5.80 6.20 i 0.0019 0.0098 0.05 0.25 d 0.0500* 1.27 * j 0.0157 0.0500 0.40 1.27 e 0.0130 0.0201 0.33 0.51 k 0.0067 0.0098 0.17 0.25 f 0.1472 0.1527 3.74 3.88 l 0.0531 0.0610 1.35 1.55 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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